 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MMBZ5V6ALT1 Series Preferred Device 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors SOT-23 Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium. Features 3 1 2 xxx M = Device Code = Date Code http://onsemi.com 1 3 2 MARKING DIAGRAM SOT-23 CASE 318 STYLE 12 * Pb-Free Packages are Available * SOT-23 Package Allows Either Two Separate Unidirectional * * * * * * * Configurations or a Single Bidirectional Configuration Working Peak Reverse Voltage Range - 3 V to 26 V Standard Zener Breakdown Voltage Range - 5.6 V to 33 V Peak Power - 24 or 40 Watts @ 1.0 ms (Unidirectional), per Figure 5 Waveform ESD Rating of Class N (exceeding 16 kV) per the Human Body Model Maximum Clamping Voltage @ Peak Pulse Current Low Leakage < 5.0 mA Flammability Rating UL 94 V-O xxx ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the table on page 3 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Mechanical Characteristics CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260C for 10 Seconds Package designed for optimal automated board assembly Small package size for high density applications Available in 8 mm Tape and Reel Use the Device Number to order the 7 inch/3,000 unit reel. Replace the "T1" with "T3" in the Device Number to order the 13 inch/10,000 unit reel. (c) Semiconductor Components Industries, LLC, 2004 1 August, 2004 - Rev. 7 Publication Order Number: MMBZ5V6ALT1/D M MMBZ5V6ALT1 Series MAXIMUM RATINGS Rating Peak Power Dissipation @ 1.0 ms (Note 1) @ TL 25C MMBZ5V6ALT1 thru MMBZ10VALT1 MMBZ12VALT1 thru MMBZ33VALT1 Symbol Ppk PD RqJA PD RqJA TJ, Tstg TL Value 24 40 225 1.8 556 300 2.4 417 - 55 to +150 260 Unit Watts mW mW/C C/W mW mW/C C/W C C Total Power Dissipation on FR-5 Board (Note 2) @ TA = 25C Derate above 25C Thermal Resistance Junction-to-Ambient Total Power Dissipation on Alumina Substrate (Note 3) @ TA = 25C Derate above 25C Thermal Resistance Junction-to-Ambient Junction and Storage Temperature Range Lead Solder Temperature - Maximum (10 Second Duration) Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Non-repetitive current pulse per Figure 5 and derate above TA = 25C per Figure 6. 2. FR-5 = 1.0 x 0.75 x 0.62 in. 3. Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina. *Other voltages may be available upon request. ORDERING INFORMATION Device MMBZ5V6ALT1 MMBZ5V6ALT1G MMBZ5V6ALT3 MMBZ5V6ALT3G MMBZ6VxALT1 MMBZ6VxALT1G MMBZ6VxALT3 MMBZ6VxALT3G MMBZ9V1ALT1 MMBZ9V1ALT1G MMBZ9V1ALT3 MMBZ9V1ALT13G MMBZxxVALT1 MMBZxxVALT1G MMBZxxVALT3 MMBZxxVALT3G Package SOT-23 SOT-23 (Pb-Free) SOT-23 SOT-23 (Pb-Free) SOT-23 SOT-23 (Pb-Free) SOT-23 SOT-23 (Pb-Free) SOT-23 SOT-23 (Pb-Free) SOT-23 SOT-23 (Pb-Free) SOT-23 SOT-23 (Pb-Free) SOT-23 SOT-23 (Pb-Free) Shipping 3000 Tape & Reel 3000 Tape & Reel 10,000 Tape & Reel 10,000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel 10,000 Tape & Reel 10,000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel 10,000 Tape & Reel 10,000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel 10,000 Tape & Reel 10,000 Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MMBZ5V6ALT1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Symbol IPP VC VRWM IR VBR IT QVBR IF VF ZZT IZK ZZK Parameter Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Maximum Temperature Coefficient of VBR Forward Current Forward Voltage @ IF Maximum Zener Impedance @ IZT Reverse Current Maximum Zener Impedance @ IZK IPP VC VBR VRWM IR VF IT V IF I Uni-Directional TVS ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3) (VF = 0.9 V Max @ IF = 10 mA) 24 WATTS Breakdown Voltage VRWM Volts 3.0 3.0 4.5 6.0 6.5 IR @ VRWM mA 5.0 0.5 0.5 0.3 0.3 VBR (Note 4) (V) Min 5.32 5.89 6.46 8.65 9.50 Nom 5.6 6.2 6.8 9.1 10 Max 5.88 6.51 7.14 9.56 10.5 @ IT mA 20 1.0 1.0 1.0 1.0 Max Zener Impedance (Note 5) ZZT @ IZT W 11 - - - - ZZK @ IZK W 1600 - - - - mA 0.25 - - - - VC @ IPP (Note 6) VC V 8.0 8.7 9.6 14 14.2 IPP A 3.0 2.76 2.5 1.7 1.7 QVBR mV/5C 1.26 2.80 3.4 7.5 7.5 Device MMBZ5V6AL MMBZ6V2AL MMBZ6V8AL MMBZ9V1AL MMBZ10VAL Device Marking 5A6 6A2 6A8 9A1 10A (VF = 0.9 V Max @ IF = 10 mA) VRWM Volts 8.5 12 14.5 17 22 26 IR @ VRWM nA 200 50 50 50 50 50 40 WATTS Breakdown Voltage VBR (Note 4) (V) Min 11.40 14.25 17.10 19.00 25.65 31.35 Nom 12 15 18 20 27 33 Max 12.60 15.75 18.90 21.00 28.35 34.65 @ IT mA 1.0 1.0 1.0 1.0 1.0 1.0 VC @ IPP (Note 6) VC V 17 21 25 28 40 46 IPP A 2.35 1.9 1.6 1.4 1.0 0.87 QVBR mV/5C 7.5 12.3 15.3 17.2 24.3 30.4 Device MMBZ12VAL MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL Device Marking 12A 15A 18A 20A 27A 33A 4. VBR measured at pulse test current IT at an ambient temperature of 25C. 5. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC) = 0.1 IZ(DC), with the AC frequency = 1.0 kHz. 6. Surge current waveform per Figure 5 and derate per Figure 6 http://onsemi.com 3 MMBZ5V6ALT1 Series TYPICAL CHARACTERISTICS 18 BREAKDOWN VOLTAGE (VOLTS) (VBR @ IT) 15 12 9 6 3 0 -40 0.1 0.01 -40 IR (nA) 10 1000 100 1 0 + 100 + 50 TEMPERATURE (C) + 150 + 85 + 25 TEMPERATURE (C) + 125 Figure 1. Typical Breakdown Voltage versus Temperature (Upper curve for each voltage is bidirectional mode, lower curve is unidirectional mode) Figure 2. Typical Leakage Current versus Temperature 320 280 C, CAPACITANCE (pF) 240 200 160 120 15 V 80 40 0 0 1 BIAS (V) 2 3 5.6 V PD, POWER DISSIPATION (mW) 300 250 ALUMINA SUBSTRATE 200 150 100 FR-5 BOARD 50 0 0 25 50 75 100 125 TEMPERATURE (C) 150 175 Figure 3. Typical Capacitance versus Bias Voltage (Upper curve for each voltage is unidirectional mode, lower curve is bidirectional mode) Figure 4. Steady State Power Derating Curve http://onsemi.com 4 MMBZ5V6ALT1 Series TYPICAL CHARACTERISTICS PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ TA = 25C 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (C) 200 tr 10 ms 100 VALUE (%) PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IPP. PEAK VALUE - IPP IPP HALF VALUE - 2 50 tP 0 0 1 2 3 t, TIME (ms) 4 Figure 5. Pulse Waveform MMBZ5V6ALT1 100 Ppk, PEAK SURGE POWER (W) RECTANGULAR WAVEFORM, TA = 25C BIDIRECTIONAL 100 Ppk, PEAK SURGE POWER (W) Figure 6. Pulse Derating Curve MMBZ5V6ALT1 RECTANGULAR WAVEFORM, TA = 25C BIDIRECTIONAL 10 UNIDIRECTIONAL 10 UNIDIRECTIONAL 1 1 0.1 1 10 100 1000 0.1 1 10 100 1000 PW, PULSE WIDTH (ms) PW, PULSE WIDTH (ms) Figure 7. Maximum Non-repetitive Surge Power, Ppk versus PW Power is defined as VRSM x IZ(pk) where VRSM is the clamping voltage at IZ(pk). Figure 8. Maximum Non-repetitive Surge Power, Ppk(NOM) versus PW Power is defined as VZ(NOM) x IZ(pk) where VZ(NOM) is the nominal Zener voltage measured at the low test current used for voltage classification. http://onsemi.com 5 MMBZ5V6ALT1 Series TYPICAL COMMON ANODE APPLICATIONS A quad junction common anode design in a SOT-23 package protects four separate lines using only one package. This adds flexibility and creativity to PCB design especially when board space is at a premium. Two simplified examples of TVS applications are illustrated below. Computer Interface Protection A KEYBOARD TERMINAL PRINTER ETC. B I/O C D FUNCTIONAL DECODER GND MMBZ5V6ALT1 THRU MMBZ33VALT1 Microprocessor Protection VDD VGG ADDRESS BUS RAM ROM DATA BUS I/O CPU CLOCK CONTROL BUS MMBZ5V6ALT1 THRU MMBZ33VALT1 GND MMBZ5V6ALT1 THRU MMBZ33VALT1 http://onsemi.com 6 MMBZ5V6ALT1 Series PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-09 ISSUE AH A L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01, -02, AND -06 OBSOLETE, NEW STANDARD 318-09. INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0385 0.0498 0.0140 0.0200 0.0670 0.0826 0.0040 0.0098 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.99 1.26 0.36 0.50 1.70 2.10 0.10 0.25 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 3 1 2 B S V G C D H K J DIM A B C D G H J K L S V STYLE 12: PIN 1. CATHODE 2. CATHODE 3. ANODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 MMBZ5V6ALT1 Series ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 8 MMBZ5V6ALT1/D |
Price & Availability of MMBZ5V6ALT1G
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |